Tuning the conductance topology in solids
نویسندگان
چکیده
The inertia of trapping and detrapping nonequilibrium charge carriers affects the electrochemical transport properties both bulk nanoscopic structures in a very peculiar way. An emerging memory response with hysteresis current–voltage its eventual multiple crossing, produced by this universally available ingredient, are signatures process. Here, we deliver microscopic analytical solution for these behaviors, understood as modulation topology loops. Memory emergence thus becomes characterization tool intrinsic features that affect electronic solids such nature number sites, symmetry constraints, natural relaxation time scales. This method is also able to reduce seeming complexity frequency-dependent impedance cyclic voltammetry observable variety systems combination simple ingredients.
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2023
ISSN: ['1089-7550', '0021-8979', '1520-8850']
DOI: https://doi.org/10.1063/5.0142721